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Корпус: TO-220AB Производитель: Infineon Technologies Сайт производителя: www.infineon.com Документация: PDF-1 , PDF-2 , PDF-3 производитель:Infineon Technologies AG Manufacturer: Infineon Technologies Series: HEXFETВ® Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25В°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250ВµA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): В±16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55В°C ~ 175В°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package Case: TO-220-3 | |||||||||||||||||||||||||||||||||||
IRL530NPBF #50 | |||||||||||||||||||||||||||||||||||
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Корпус: TO-220AB Производитель: Infineon Technologies Сайт производителя: www.infineon.com Документация: PDF-1 , PDF-2 , PDF-3 производитель:Infineon Technologies AG Manufacturer: Infineon Technologies Series: HEXFETВ® Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25В°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250ВµA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): В±16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55В°C ~ 175В°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package Case: TO-220-3 | |||||||||||||||||||||||||||||||||||
IRL530NPBF #50 | |||||||||||||||||||||||||||||||||||
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Корпус: TO-220AB Производитель: Infineon Technologies Сайт производителя: www.infineon.com Документация: PDF-1 , PDF-2 , PDF-3 производитель:Infineon Technologies AG Manufacturer: Infineon Technologies Series: HEXFETВ® Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25В°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250ВµA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): В±16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55В°C ~ 175В°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package Case: TO-220-3 | |||||||||||||||||||||||||||||||||||